Effects of channel thickness variation on bias stress instability of InGaZnO thin-film transistors.
Edward Namkyu ChoJung Han KangIlgu YunPublished in: Microelectron. Reliab. (2011)
Keyphrases
- thin film
- high density
- field effect transistors
- film thickness
- grain size
- low density
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- solar cell
- power consumption
- liquid crystal displays
- white light interferometry
- electron microscopy
- chemical vapor deposition
- databases
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- plasma etching
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