Resistive switching memory using titanium-oxide nanoparticle films.
Emanuele VerrelliDimitris TsoukalasPascal NormandNikos BoukosA. H. KeanPublished in: ESSDERC (2012)
Keyphrases
- electrical properties
- metal oxide
- silicon dioxide
- silicon nitride
- memory requirements
- permalloy films
- memory usage
- memory size
- limited memory
- transmission electron microscopy
- neural network
- memory space
- random access
- computational power
- main memory
- information systems
- condition monitoring
- computing power
- fuel cell
- database systems
- si sio
- learning algorithm