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Tri-layer, vertical Y-junction, Si3N4/SiO2 3D photonic integrated circuits with arbitrary splitting ratio.
Kuanping Shang
Shibnath Pathak
Binbin Guan
Guangyao Liu
Shaoqi Feng
S. J. Ben Yoo
Published in:
OFC (2016)
Keyphrases
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integrated circuit
metal oxide
silicon dioxide
space charge
leakage current
x ray
multi layer
real time
standard deviation
electron beam
si sio
application layer
single layer
physical characteristics