A Gate Bias and Temperature Dependencies of Contact Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors.
Sungsik LeePublished in: IEEE Access (2021)
Keyphrases
- thin film
- field effect transistors
- high density
- room temperature
- chemical vapor deposition
- film thickness
- low density
- semiconductor devices
- silicon dioxide
- space charge
- short circuit
- integrated circuit
- plasma etching
- data center
- steady state
- electron microscopy
- grain size
- solar cell
- electric field
- mathematical analysis
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