A ±0.4°C (3σ) -70 to 200°C time-domain temperature sensor based on heat diffusion in Si and SiO2.
Caspar P. L. van VroonhovenDan d'AquinoKofi A. A. MakinwaPublished in: ISSCC (2012)
Keyphrases
- heat diffusion
- metal oxide
- x ray
- leakage current
- film thickness
- chemical vapor deposition
- frequency domain
- solid state
- high speed
- si sio
- electrical properties
- high temperature
- information systems
- heat flow
- low voltage
- sensor data
- room temperature
- electric field
- database
- thin film
- temperature control
- information retrieval
- neural network
- databases
- data sets
- social networks
- real time