Device circuit and technology co-optimisation for FinFET based 6T SRAM cells beyond N7.
Mohit Kumar GuptaPieter WeckxStefan CosemansPieter SchuddinckRogier BaertDmitry YakimetsDoyoung JangYasser SheraziPraveen RaghavanAlessio SpessotAnda MocutaWim DehaenePublished in: ESSDERC (2017)