Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS.
Tatsuya OnukiWataru UesugiHikaru TamuraAtsuo IsobeYoshinori AndoSatoru OkamotoKiyoshi KatoTri Rung YewChen Bin LinJ. Y. WuChi Chang ShuaiShao Hui WuJames MyersKlaus DopplerMasahiro FujitaShunpei YamazakiPublished in: VLSI Circuits (2016)
Keyphrases
- room temperature
- dynamic random access memory
- metal oxide
- silicon on insulator
- leakage current
- thin film
- transmission electron microscopy
- cmos technology
- nm technology
- embedded systems
- metal oxide semiconductor
- low voltage
- x ray
- low cost
- high speed
- solid state
- magnetic field
- memory requirements
- high density
- low power
- human brain
- high resolution