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Impact of work function of the silicon bottom-gates on electrical instability in InGaZnO thin film transistors.
Hyun Jun Jang
Chong-Gun Yu
Jong-Tae Park
Published in:
Microelectron. Reliab. (2016)
Keyphrases
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thin film
high density
short circuit
solar cell
plasma etching
chemical vapor deposition
low density
data center
multi layer
chance discovery
electron microscopy
field effect transistors
high speed
room temperature
space charge
neural nets
power consumption
low cost
silicon nitride