N/AlN/GaN MIS-HEMT (Metal Insulator Semiconductor High Electron Mobility Transistors) on Si for Sensor Applications.
Pin-Guang ChenKuan-Ting ChenMing TangZheng-Ying WangYu-Chen ChouMin-Hung LeePublished in: Sensors (2018)
Keyphrases
- metal oxide
- space charge
- field effect transistors
- electric field
- high temperature
- silicon dioxide
- wide range
- power consumption
- high sensitivity
- solid state
- plasma etching
- x ray
- semiconductor devices
- real time
- low power
- sensor data
- sensor networks
- information systems
- management information systems
- electron beam
- high density
- integrated circuit
- three dimensional
- neural network