Near Threshold Voltage Word-Line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM.
Kousuke MiyajiYasuhiro ShinozukaShinji MiyanoKen TakeuchiPublished in: IEEE Trans. Circuits Syst. I Regul. Pap. (2012)
Keyphrases
- leakage current
- electrical properties
- low voltage
- silicon dioxide
- field effect transistors
- electric field
- power system
- low power
- metal oxide
- power consumption
- cmos technology
- transmission line
- high density
- space charge
- steady state
- mathematical analysis
- short circuit
- high voltage
- power management
- n gram
- design considerations
- single phase
- contrast agent
- co occurrence
- power line
- word recognition
- line segments
- computational intelligence