Erratum: Assessing alpha-particle-induced SEU sensitivity of flip-chip bonded SRAM using high energy irradiation [IEICE Electronics Express Vol. 13 (2016) No. 17 pp. 20160627].
Saqib A. KhanShi-Jie WenSanghyeon BaegPublished in: IEICE Electron. Express (2016)
Keyphrases
- high energy
- random access memory
- power consumption
- machine intelligence
- cmos technology
- high density
- analog vlsi
- low cost
- high speed
- sensitivity analysis
- ieee trans
- high sensitivity
- vlsi design
- signal processing
- design considerations
- low power
- programmable logic
- data transmission
- dynamic random access memory
- ai edam
- single chip
- artificial intelligence
- low voltage
- power reduction
- host computer
- embedded dram
- evolvable hardware
- input output
- electrical engineering
- chip design
- electron beam
- physical design