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The resistive switching characteristics in tantalum oxide-based RRAM device via combining high-temperature sputtering with plasma oxidation.

Xiaorong ChenJie FengHaili Ma
Published in: NVMTS (2015)
Keyphrases
  • high temperature
  • silicon dioxide
  • high density
  • field effect transistors
  • combining multiple
  • metal oxide
  • real time
  • x ray
  • magnetic field
  • electron microscopy
  • high pressure
  • fuel cell
  • transmission electron microscopy