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Current-voltage characteristics of ballistic schottky barrier GNRFET and CNTFET: Effect of gate oxide thickness.
Sheikh Ziauddin Ahmed
Mashiyat Sumaiya Shawkat
Md. Iramul Hoque Chowdhury
Sharif Mohammad Mominuzzaman
Published in:
NEMS (2015)
Keyphrases
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field effect transistors
schottky barrier
steady state
high density
low voltage
leakage current
mathematical analysis
silicon dioxide
room temperature
electrical properties
data streams
x ray
power line
metal oxide