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Impact of Thin-oxide Gate on the On-Resistance of HV-PNP Under ESD Stress.

M. MonishmuraliNagothu Karmel KranthiGianluca BoselliMayank Shrivastava
Published in: IRPS (2023)
Keyphrases
  • metal oxide
  • high impact
  • silicon dioxide
  • field effect transistors
  • real time
  • artificial intelligence
  • information systems
  • image processing
  • information technology
  • room temperature
  • fuel cell
  • leakage current