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On the Dependence of Band Alignment of SiO₂/Si Stack on SiO₂ Thickness: Extrinsic Or Intrinsic?

Yonggui XuKai HanJinjuan XiangXiaolei Wang
Published in: IEEE Access (2020)
Keyphrases
  • metal oxide
  • film thickness
  • silicon dioxide
  • electrical properties
  • leakage current
  • x ray
  • gate insulator
  • high speed
  • multi view
  • thin film
  • image alignment
  • solid state
  • multiscale
  • low cost
  • si sio