Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs.
Aditi AgarwalKijeong HanB. Jayant BaligaPublished in: DRC (2019)
Keyphrases
- leakage current
- low voltage
- power management
- silicon dioxide
- design considerations
- power grid
- electrical properties
- field effect transistors
- power consumption
- cmos technology
- nano scale
- gate insulator
- power distribution
- short circuit
- physical characteristics
- main factors
- transmission line
- electrical energy
- high speed