B. Jayant Baliga

Publication Activity (10 Years)

Years Active: 1988-2023
Publications (10 Years): 10

Top Topics

Power Management

Electrical Properties

Experimental Comparison

Top Venues

Publications

Sneha Narasimhan, Ajit Kanale, Subhashish Bhattacharya, B. Jayant Baliga
Performance Evaluation of 3.3 kV SiC MOSFET and Schottky Diode Based Reverse Voltage Blocking Switch for Medium Voltage Current Source Inverter Application. IEEE Access 11 (2023)
Ajit Kanale, B. Jayant Baliga
Theoretical Optimization of the Si GSS-DMM Device in the BaSIC Topology for SiC Power MOSFET Short-Circuit Capability Improvement. IEEE Access 9 (2021)
Aditi Agarwal, Kijeong Han, B. Jayant Baliga
2.3 kV 4H-SiC Accumulation-channel JBSFETs: Experimental Comparison of Linear, Hexagonal and Octagonal Cell Topologies. DRC (2020)
Aditi Agarwal, Kijeong Han, B. Jayant Baliga
Impact of Gate Oxide Thickness on Electrical Characteristics of 1200 V 4H-SiC Planar-Gate Power MOSFETs. DRC (2019)
Ajit Kanale, B. Jayant Baliga
Comparison of Current Suppression Methods to Enhance Short Circuit Capability of 1.2 kV SiC Power MOSFETs: A New Approach using a Series-connected, Gate-Source-Shorted Si Depletion-Mode MOSFET vs Reduced Gate Bias Operation. IECON (2019)
Ajit Kanale, Kijeong Han, B. Jayant Baliga, Subhashish Bhattacharya
Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress. IRPS (2019)
Aditi Agarwal, Kijeong Han, B. Jayant Baliga
Impact of Channel Length on Characteristics of 600V 4H-SiC Inversion-channel Planar MOSFETs. ESSDERC (2019)
B. Jayant Baliga
Silicon Carbide Power Devices: A 35 Year Journey from Conception to Commercialization. DRC (2018)
WoongJe Sung, B. Jayant Baliga
On Developing One-Chip Integration of 1.2 kV SiC MOSFET and JBS Diode (JBSFET). IEEE Trans. Ind. Electron. 64 (10) (2017)
B. Jayant Baliga
SiC power devices: From conception to social impact. ESSDERC (2016)
B. Jayant Baliga
The future of power semiconductor device technology. Proc. IEEE 89 (6) (2001)
B. Jayant Baliga
Power semiconductor devices for variable-frequency drives. Proc. IEEE 82 (8) (1994)
B. Jayant Baliga
Evolution of MOS-bipolar power semiconductor technology. Proc. IEEE 76 (4) (1988)