The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors.
N. Tosic GoloS. van der WalFred G. KuperTon J. MouthaanPublished in: Microelectron. Reliab. (2001)
Keyphrases
- thin film
- high density
- trade off
- short circuit
- field effect transistors
- room temperature
- solar cell
- low density
- plasma etching
- data center
- grain size
- chemical vapor deposition
- electron microscopy
- semiconductor devices
- silicon nitride
- power system
- white light interferometry
- cmos technology
- data mining
- power consumption
- electrical properties