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The time-voltage trade-off for ESD damage threshold in amorphous silicon hydrogenated thin-film transistors.
N. Tosic Golo
S. van der Wal
Fred G. Kuper
Ton J. Mouthaan
Published in:
Microelectron. Reliab. (2001)
Keyphrases
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thin film
high density
trade off
short circuit
field effect transistors
room temperature
solar cell
low density
plasma etching
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grain size
chemical vapor deposition
electron microscopy
semiconductor devices
silicon nitride
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white light interferometry
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