Field Effect Transistors under DC Bias Stress via Optical Charge-Pumping Capacitance-Voltage Spectroscopy.
Ga Won YangSeung Gi SeoSungju ChoiDae Hwan KimSung Hun JinPublished in: IEEE Access (2021)
Keyphrases
- field effect transistors
- steady state
- high density
- charge coupled device
- high speed
- schottky barrier
- mathematical analysis
- semiconductor devices
- x ray
- infrared
- markov chain
- transmission line
- unit length
- high frequency
- nuclear magnetic resonance
- real time
- dynamic programming
- search space
- metal oxide
- output voltage
- liquid crystal
- electron beam
- electron microscopy
- operating conditions
- low power