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Fringe Gate Leakage of 28nm HK/MG nMOSFETs with Nitridation Treatments.

De-Cheng ZhangChing-Chuan ChouHo-Hsiang ChenShang-Ze ChenJian-Ming ChenHui-Yun BorWen-How LanMu-Chun Wang
Published in: ICKII (2020)
Keyphrases
  • leakage current
  • low voltage
  • electrical properties
  • silicon dioxide
  • cmos technology
  • power line
  • high speed
  • scale invariant
  • clinical trials
  • nm technology
  • neural network
  • artificial intelligence
  • multiscale
  • health care