A 40-nm Resilient Cache Memory for Dynamic Variation Tolerance Delivering ×91 Failure Rate Improvement under 35% Supply Voltage Fluctuation.
Yohei NakataYuta KimiShunsuke OkumuraJinwook JungTakuya SawadaTaku ToshikawaMakoto NagataHirofumi NakanoMakoto YabuuchiHidehiro FujiwaraKoji NiiHiroyuki KawaiHiroshi KawaguchiMasahiko YoshimotoPublished in: IEICE Trans. Electron. (2014)