Measurement of stresses in Cu and Si around through-silicon via by synchrotron X-ray microdiffraction for 3-dimensional integrated circuits.
A. S. BudimanH.-A.-S. ShinB.-J. KimS.-H. HwangHo-Young SonM.-S. SuhQ.-H. ChungK.-Y. ByunN. TamuraM. KunzY.-C. JooPublished in: Microelectron. Reliab. (2012)
Keyphrases
- x ray
- integrated circuit
- electron microscopy
- metal oxide
- si sio
- transmission electron microscopy
- electron beam
- solar cell
- x ray images
- metal oxide semiconductor
- medical imaging
- intraoperative
- ct scans
- digital x ray images
- three dimensional
- low cost
- projection images
- high speed
- low dose
- tomographic images
- image guided
- hardware description language
- thin film
- high density