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Effect of the active layer thickness on the electrical and electroluminescent properties in silicon rich oxide based light emitting capacitors.

Santiago A. Cabanas-TayAlfredo Morales-SanchezCarlos Dominguez-Horna
Published in: CCE (2016)
Keyphrases
  • high speed
  • metal oxide
  • silicon dioxide
  • light emitting
  • si sio
  • electrical properties
  • light emitting diodes
  • transmission electron microscopy
  • low cost
  • printed circuit boards
  • field effect transistors
  • leakage current