Intrinsic variations of ultrathin hafnium oxide-based ferroelectric tunnel junctions induced by ferroelectric-dielectric phase fluctuations.
Pengying ChangMengqi FanGang DuXiaoyan LiuYiyang XiePublished in: Sci. China Inf. Sci. (2023)
Keyphrases
- electrical properties
- room temperature
- leakage current
- gate dielectrics
- gate insulator
- silicon nitride
- silicon dioxide
- real world
- training phase
- low cost
- information systems
- databases
- learning phase
- transmission line
- preprocessing
- image processing
- artificial intelligence
- junction detection
- genetic algorithm
- data mining