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Impact of back side circuit edit on active device performance in bulk silicon ICs.
Uwe Kerst
Rudolf Schlangen
A. Kabakow
Erwan Le Roy
Ted R. Lundquist
Siegfried Pauthner
Published in:
ITC (2005)
Keyphrases
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semiconductor devices
field effect transistors
high speed
metal oxide semiconductor
gallium arsenide
silicon on insulator
electron beam
steady state
high density
cmos technology
low cost
data acquisition
integrated circuit
high impact
data sets
active control
databases
mathematical analysis
case study
real time