Xiaorong Luo

Publication Activity (10 Years)

Years Active: 2013-2024
Publications (10 Years): 11

Top Topics

Operating Conditions

Schottky Barrier

Epipolar Geometry Estimation

Top Venues

Sci. China Inf. Sci.

Microelectron. J.

Appl. Math. Lett.

Publications

Chengtao Luo, Cheng Yang, Zhijia Zhao, Xintong Xie, Yuxi Wei, Jie Wei, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo
Novel high-voltage GaN CAVET with high threshold voltage and low reverse conduction loss. Microelectron. J. 148 (2024)
Xintong Xie, Shuxiang Sun, Zhijia Zhao, Pengfei Zhang, Jie Wei, Xin Zhou, Jingyu Shen, Jinpeng Qiu, Xiaorong Luo
Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode. Microelectron. J. 144 (2024)
Xiaorong Luo, Linyao Hao, Yuxi Wei, Kaiwei Dai, Xiaosong Peng, Zhuolin Jiang, Yuxin Wu
High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination. Microelectron. J. 150 (2024)
Zhijia Zhao, Yuxi Wei, Tao Sun, Kemeng Yang, Jie Wei, Yanjiang Jia, Siyu Deng, Xiaorong Luo, Bo Zhang
High voltage GaN vertical FinFET with a compatible integrated fin diode for low reverse conduction loss. Microelectron. J. 136 (2023)
Xiaorong Luo, Anmin Mao
Sign-changing solutions to the critical Choquard equation. Appl. Math. Lett. 132 (2022)
Xiaorong Luo, Junyue Huang, Xu Song, Qinfeng Jiang, Jie Wei, Jian Fang, Fei Yang
Novel SiC SBD-wall-integrated trench MOSFET with a semi-superjunction and split trench gate. Sci. China Inf. Sci. 65 (6) (2022)
Xin Liu, Yuhong Lei, Xiaorong Luo, Xiangzeng Wang, Kaiyuan Chen, Ming Cheng, Jintao Yin
TOC determination of Zhangjiatan shale of Yanchang formation, Ordos Basin, China, using support vector regression and well logs. Earth Sci. Informatics 14 (2) (2021)
Fu Peng, Chao Yang, Siyu Deng, Dongya Ouyang, Bo Zhang, Jie Wei, Xiaorong Luo
Simulation of a high-performance enhancement-mode HFET with back-to-back graded AlGaN layers. Sci. China Inf. Sci. 62 (6) (2019)
Chao Yang, Xiaorong Luo, Siyu Deng, Fu Peng, Bo Zhang
High-voltage trench-gate hole-gas enhancement-mode HEMT with multi-conduction channels. Sci. China Inf. Sci. 61 (6) (2018)
Xiaorong Luo, Weiwei Ge, Bo Zhang
Ultralow power loss integratable high-voltage MOSFETs. ASICON (2017)
Jiayun Xiong, Chao Yang, Jie Wei, Junfeng Wu, Bo Zhang, Xiaorong Luo
Novel high voltage RESURF AlGaN/GaN HEMT with charged buffer layer. Sci. China Inf. Sci. 59 (4) (2016)
Jie Fan, Xiaorong Luo, Bo Zhang, Zhaoji Li
Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer. J. Circuits Syst. Comput. 22 (10) (2013)