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Novel High voltage silicon-on-insulator Device with Composite dielectric buried Layer.

Jie FanXiaorong LuoBo ZhangZhaoji Li
Published in: J. Circuits Syst. Comput. (2013)
Keyphrases
  • high voltage
  • silicon on insulator
  • silicon dioxide
  • operating conditions
  • normal operation
  • cmos technology
  • partial discharge
  • ibm power processor
  • real time
  • artificial intelligence
  • computational complexity