High breakdown voltage β-Ga2O3 Schottky barrier diode with fluorine-implanted termination.
Xiaorong LuoLinyao HaoYuxi WeiKaiwei DaiXiaosong PengZhuolin JiangYuxin WuPublished in: Microelectron. J. (2024)
Keyphrases
- schottky barrier
- field effect transistors
- random search
- high breakdown
- genetic algorithm ga
- high density
- genetic algorithm
- steady state
- robust estimation
- simulated annealing
- mathematical analysis
- power system
- fitness function
- search space
- parameter optimization
- epipolar geometry estimation
- artificial neural networks
- neural network
- markov chain
- evolutionary algorithm
- transmission line
- range image segmentation
- least squares
- video coding
- configuration space
- control system
- fundamental matrix estimation
- computational complexity