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Improvement of reverse conduction characteristic and single event effect for a novel vertical GaN field effect transistor with an integrated MOS-channel diode.

Xintong XieShuxiang SunZhijia ZhaoPengfei ZhangJie WeiXin ZhouJingyu ShenJinpeng QiuXiaorong Luo
Published in: Microelectron. J. (2024)
Keyphrases
  • field effect transistors
  • schottky barrier
  • high density
  • steady state
  • mathematical analysis
  • databases
  • image analysis
  • event detection
  • event driven
  • significant improvement
  • event recognition