X. L. Han

Publication Activity (10 Years)

Years Active: 2015-2024
Publications (10 Years): 2

Top Topics

Behavioral Model

Gate Dielectrics

Leakage Current

Top Venues

Microelectron. J.

Publications

S. H. Meng, X. L. Han, P. Ding, B. Mei, Y. B. Su, J. L. Zhang, H. Q. Yun, Z. Jin, Yinghui Zhong
A behavioral model for electron irradiation effect on the DC performance in InP-based HEMT. Microelectron. J. 148 (2024)
Guilhem Larrieu, Y. Guerfi, X. L. Han, N. Clement
Vertical field effect transistor with sub-15nm gate-all-around on Si nanowire array. ESSDERC (2015)