Wei Xu

Publication Activity (10 Years)

Years Active: 2008-2013
Publications (10 Years): 0

Top Topics

Emerging Trends

Random Access Memory

Top Venues

IEEE Trans. Very Large Scale Integr. Syst.

IEEE Trans. Computers

IEEE J. Solid State Circuits

Publications

Yangyang Pan, Yiran Li, Hongbin Sun, Wei Xu, Nanning Zheng, Tong Zhang
Exploring the Use of Emerging Nonvolatile Memory Technologies in Future FPGAs. IEEE Trans. Very Large Scale Integr. Syst. 21 (4) (2013)
Qi Wu, Fei Sun, Wei Xu, Tong Zhang
Using Multilevel Phase Change Memory to Build Data Storage: A Time-Aware System Design Perspective. IEEE Trans. Computers 62 (10) (2013)
Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang
A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme. IEEE J. Solid State Circuits 47 (2) (2012)
Hongbin Sun, Chuanyin Liu, Wei Xu, Jizhong Zhao, Nanning Zheng, Tong Zhang
Using Magnetic RAM to Build Low-Power and Soft Error-Resilient L1 Cache. IEEE Trans. Very Large Scale Integr. Syst. 20 (1) (2012)
Wei Xu, Hongbin Sun, Xiaobin Wang, Yiran Chen, Tong Zhang
Design of Last-Level On-Chip Cache Using Spin-Torque Transfer RAM (STT RAM). IEEE Trans. Very Large Scale Integr. Syst. 19 (3) (2011)
Wei Xu, Tong Zhang
A Time-Aware Fault Tolerance Scheme to Improve Reliability of Multilevel Phase-Change Memory in the Presence of Significant Resistance Drift. IEEE Trans. Very Large Scale Integr. Syst. 19 (8) (2011)
Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang
Combined magnetic- and circuit-level enhancements for the nondestructive self-reference scheme of STT-RAM. ISLPED (2010)
Wei Xu, Tong Zhang
Using time-aware memory sensing to address resistance drift issue in multi-level phase change memory. ISQED (2010)
Yiran Chen, Hai Li, Xiaobin Wang, Wenzhong Zhu, Wei Xu, Tong Zhang
A nondestructive self-reference scheme for Spin-Transfer Torque Random Access Memory (STT-RAM). DATE (2010)
Wei Xu, Tong Zhang, Yiran Chen
Design of Spin-Torque Transfer Magnetoresistive RAM and CAM/TCAM with High Sensing and Search Speed. IEEE Trans. Very Large Scale Integr. Syst. 18 (1) (2010)
Wei Xu, Jibang Liu, Tong Zhang
Data manipulation techniques to reduce phase change memory write energy. ISLPED (2009)
Wei Xu, Yiran Chen, Xiaobin Wang, Tong Zhang
Improving STT MRAM storage density through smaller-than-worst-case transistor sizing. DAC (2009)
Wei Xu, Tong Zhang, Yiran Chen
Spin-transfer torque magnetoresistive content addressable memory (CAM) cell structure design with enhanced search noise margin. ISCAS (2008)