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A 130 nm 1.2 V/3.3 V 16 Kb Spin-Transfer Torque Random Access Memory With Nondestructive Self-Reference Sensing Scheme.

Yiran ChenHai LiXiaobin WangWenzhong ZhuWei XuTong Zhang
Published in: IEEE J. Solid State Circuits (2012)
Keyphrases
  • random access memory
  • real time
  • multi dimensional
  • database systems
  • design considerations
  • embedded dram