L. J. Balk

Publication Activity (10 Years)

Years Active: 2001-2010
Publications (10 Years): 0

Publications

M. Fakhri, A.-K. Geinzer, R. Heiderhoff, L. J. Balk
Nanoscale thermally induced stress analysis by complementary Scanning Thermal Microscopy techniques. Microelectron. Reliab. 50 (9-11) (2010)
A.-K. Tiedemann, K. Kurz, M. Fakhri, R. Heiderhoff, J. C. H. Phang, L. J. Balk
Finite element analyses assisted Scanning Joule Expansion Microscopy on interconnects for failure analysis and reliability investigations. Microelectron. Reliab. 49 (9-11) (2009)
D. Isakov, A. A. B. Tio, T. Geinzer, J. C. H. Phang, Y. Zhang, L. J. Balk
Near-field detection of photon emission from silicon with 30 nm spatial resolution. Microelectron. Reliab. 48 (8-9) (2008)
A. Pugatschow, R. Heiderhoff, L. J. Balk
Time resolved determination of electrical field distributions within dynamically biased power devices by spectral EBIC investigations. Microelectron. Reliab. 47 (9-11) (2007)
L. J. Balk, W. H. Gerling, E. Wolfgang
Editorial. Microelectron. Reliab. 46 (9-11) (2006)
T. H. Lee, X. Guo, G. D. Shen, Yuan Ji, G. H. Wang, J. Y. Du, X. Z. Wang, G. Gao, A. Altes, L. J. Balk
Investigation of Tunnel-Regenerated Multi-Active-Region Light-Emitting Diodes (TRMAR LED) by Scanning Thermal Microscopy (STHM). Microelectron. Reliab. 42 (9-11) (2002)
M. Zmeck, J. C. H. Phang, Andrew Bettiol, T. Osipowicz, F. Watt, L. J. Balk, Franz-Josef Niedernostheide, Hans-Joachim Schulze, E. Falck, R. Barthelmess
Analysis of high-power devices using proton beam induced charge microscopy. Microelectron. Reliab. 41 (9-10) (2001)