Analysis of high-power devices using proton beam induced charge microscopy.
M. ZmeckJ. C. H. PhangAndrew BettiolT. OsipowiczF. WattL. J. BalkFranz-Josef NiedernostheideHans-Joachim SchulzeE. FalckR. BarthelmessPublished in: Microelectron. Reliab. (2001)