Kunyang Liu

Publication Activity (10 Years)

Years Active: 2018-2024
Publications (10 Years): 13

Top Topics

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Top Venues

IEEE J. Solid State Circuits

Publications

Xingyu Wang, Ruilin Zhang, Kunyang Liu, Hirofumi Shinohara
A 0.116 pJ/bit Latch-Based True Random Number Generator Featuring Static Inverter Selection and Noise Enhancement. IEEE Trans. Very Large Scale Integr. Syst. 32 (3) (2024)
Ruilin Zhang, Haochen Zhang, Xingyu Wang, Ziyang Ye, Kunyang Liu, Hirofumi Shinohara
Practical Markov Chain and Von Neumann based Post-processing Circuits for True Random Number Generators. MWSCAS (2023)
Kunyang Liu, Yichen Tang, Shufan Xu, Ruilin Zhang, Hirofumi Shinohara
A 100-Bit-Output Modeling Attack-Resistant SPN Strong PUF with Uniform and High-Randomness Response. CICC (2023)
Ruilin Zhang, Xingyu Wang, Kunyang Liu, Hirofumi Shinohara
A 0.186-pJ per Bit Latch-Based True Random Number Generator Featuring Mismatch Compensation and Random Noise Enhancement. IEEE J. Solid State Circuits 57 (8) (2022)
Kunyang Liu, Gen Li, Zihan Fu, Xuanzhen Wang, Hirofumi Shinohara
A 2.17-pJ/b 5b-Response Attack-Resistant Strong PUF with Enhanced Statistical Performance. ESSCIRC (2022)
Xingyu Wang, Ruilin Zhang, Yuxin Wang, Kunyang Liu, Xuanzhen Wang, Hirofumi Shinohara
A 0.116pJ/bit Latch-Based True Random Number Generator with Static Inverter Selection and Noise Enhancement. VLSI-DAT (2022)
Kunyang Liu, Zihan Fu, Gen Li, Hongliang Pu, Zhibo Guan, Xingyu Wang, Xinpeng Chen, Hirofumi Shinohara
36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate Through In-Cell Hot-Carrier Injection Burn-In. ISSCC (2021)
Kunyang Liu, Xinpeng Chen, Hongliang Pu, Hirofumi Shinohara
A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement. IEEE J. Solid State Circuits 56 (7) (2021)
Ruilin Zhang, Xingyu Wang, Luying Wang, Xinpeng Chen, Fan Yang, Kunyang Liu, Hirofumi Shinohara
A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement. VLSI Circuits (2021)
Kunyang Liu, Hongliang Pu, Hirofumi Shinohara
EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in. CICC (2020)
Xingyu Wang, Hongjie Liu, Ruilin Zhang, Kunyang Liu, Hirofumi Shinohara
An Inverter-Based True Random Number Generator with 4-bit Von-Neumann Post-Processing Circuit. MWSCAS (2020)
Kunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara
0.21%-Native-BER EE SRAM Physically Unclonable Function With 2-D Power-Gated Bit Cells and ${V}_{\text{SS}}$ Bias-Based Dark-Bit Detection. IEEE J. Solid State Circuits 55 (6) (2020)
Kunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara
2D Power-Gated EE SRAM Physically Unclonable Function With Dark-Bit Detection Technique. A-SSCC (2018)