Khoirom Johnson Singh

Publication Activity (10 Years)

Years Active: 2021-2023
Publications (10 Years): 6

Top Topics

Field Effect Transistors

Design Methodology

Top Venues

Microelectron. J.

Publications

Mahipal Dargupally, Lomash Chandra Acharya, Khoirom Johnson Singh, Neha Gupta, Arvind K. Sharma, Sudeb Dasgupta, Anand Bulusu
An Efficient Standard Cell Design Methodology by Exploiting Body Biasing and Poly Biasing in FDSOI for NTV Regime. APCCAS (2023)
Lomash Chandra Acharya, Arvind Kumar Sharma, Neeraj Mishra, Khoirom Johnson Singh, Mahipal Dargupally, Nayakanti Sai Shabarish, Ajoy Mandal, Venkatraman Ramakrishnan, Sudeb Dasgupta, Anand Bulusu
Aging-Aware Timing Model of CMOS Inverter: Path Level Timing Performance and Its Impact on the Logical Effort. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42 (8) (2023)
Khoirom Johnson Singh, Lomash Chandra Acharya, Anand Bulusu, Sudeb Dasgupta
Negative capacitance gate stack and Landau FET-based voltage amplifiers and circuits: Impact of ferroelectric thickness and domain variations. Microelectron. J. 142 (2023)
Lomash Chandra Acharya, Anubhav Kumar, Khoirom Johnson Singh, Neha Gupta, Nayakanti Sai Shabarish, Neeraj Mishra, Mahipal Dargupally, Arvind Kumar Sharma, Venkatraman Ramakrishnan, Ajoy Mandal, Sudeb Dasgupta, Anand Bulusu
Beyond SPICE Simulation: A Novel Variability-Aware STA Methodology for Digital Timing Closure. SMACD (2023)
Khoirom Johnson Singh, Lomash Chandra Acharya, Anand Bulusu, Sudeb Dasgupta
Significance of Organic Ferroelectric in Harnessing Transient Negative Capacitance Effect at Low Voltage Over Oxide Ferroelectric. ISCAS (2022)
Khoirom Johnson Singh, Anand Bulusu, Sudeb Dasgupta
Harnessing Maximum Negative Capacitance Signature Voltage Window in P(VDF-TrFE) Gate Stack. ISCAS (2021)