Jun Zhou

Publication Activity (10 Years)

Years Active: 2019-2021
Publications (10 Years): 7

Top Topics

Design Principles

Power Consumption

Highly Reliable

Top Venues

Microelectron. J.

IEEE Trans. Circuits Syst.

Publications

Aibin Yan, Zhihui He, Jun Zhou, Jie Cui, Tianming Ni, Zhengfeng Huang, Xiaoqing Wen, Patrick Girard
Dual-modular-redundancy and dual-level error-interception based triple-node-upset tolerant latch designs for safety-critical applications. Microelectron. J. 111 (2021)
Aibin Yan, Yan Chen, Jun Zhou, Jie Cui, Tianming Ni, Xiaoqing Wen, Patrick Girard
A Sextuple Cross-Coupled SRAM Cell Protected against Double-Node Upsets. ATS (2020)
Zhengda Dou, Aibin Yan, Jun Zhou, Yuanjie Hu, Yan Chen, Tianming Ni, Jie Cui, Patrick Girard, Xiaoqing Wen
Design of a Highly Reliable SRAM Cell with Advanced Self-Recoverability from Soft Errors. ITC-Asia (2020)
Aibin Yan, Yan Chen, Yuanjie Hu, Jun Zhou, Tianming Ni, Jie Cui, Patrick Girard, Xiaoqing Wen
Novel Speed-and-Power-Optimized SRAM Cell Designs With Enhanced Self-Recoverability From Single- and Double-Node Upsets. IEEE Trans. Circuits Syst. (12) (2020)
Aibin Yan, Jun Zhou, Yuanjie Hu, Yan Chen, Zhen Wu, Tianming Ni
Design of a Novel Self-Recoverable SRAM Cell Protected Against Soft Errors. DSA (2019)
Aibin Yan, Zhen Wu, Jun Zhou, Yuanjie Hu, Yan Chen, Zuobin Ying, Xiaoqing Wen, Patrick Girard
Design of a Sextuple Cross-Coupled SRAM Cell with Optimized Access Operations for Highly Reliable Terrestrial Applications. ATS (2019)
Aibin Yan, Jun Zhou, Yuanjie Hu, Jie Cui, Zhengfeng Huang, Patrick Girard, Xiaoqing Wen
Novel Quadruple Cross-Coupled Memory Cell Designs With Protection Against Single Event Upsets and Double-Node Upsets. IEEE Access 7 (2019)