Hossein Ghasemian

Publication Activity (10 Years)

Years Active: 2018-2023
Publications (10 Years): 8

Top Topics

Cmos Technology

Top Venues

Microelectron. J.

Circuits Syst. Signal Process.

IEEE Embed. Syst. Lett.

IET Circuits Devices Syst.

Publications

Ayoub Sadeghi, Razieh Ghasemi, Hossein Ghasemian, Nabiollah Shiri
High Efficient GDI-CNTFET-Based Approximate Full Adder for Next Generation of Computer Architectures. IEEE Embed. Syst. Lett. 15 (1) (2023)
Ayoub Sadeghi, Razieh Ghasemi, Hossein Ghasemian, Nabiollah Shiri
Efficient and optimized approximate GDI full adders based on dynamic threshold CNTFETs for specific least significant bits. Frontiers Inf. Technol. Electron. Eng. 24 (4) (2023)
Hossein Ghasemian, Saeed Karami, Ebrahim Abiri, Mohammad Reza Salehi
Design of a Low Power Analog and Multi-shaped Fully Programmable Twin-Cell Membership Function Generator Circuit in 65 nm CMOS Technology. Circuits Syst. Signal Process. 40 (1) (2021)
Hossein Ghasemian, Amin Bahrami, Ebrahim Abiri, Mohammad Reza Salehi
A New Low-Power Charge Pump with a Glitch-Free PFD for Speedup the Acquisition Process of a PLL in 65 nm CMOS Technology. Circuits Syst. Signal Process. 40 (6) (2021)
Hossein Ghasemian, Amirhossein Ahmadi, Ebrahim Abiri, Mohammad Reza Salehi
An implementation of a new 11-bit 1.2 GS/s hybrid DAC with a noval 3-bit Sub-DAC. Microelectron. J. 103 (2020)
Hossein Ghasemian, Razieh Ghasemi, Ebrahim Abiri, Mohammad Reza Salehi
A novel high-speed low-power dynamic comparator with complementary differential input in 65 nm CMOS technology. Microelectron. J. 92 (2019)
Mohammad Reza Nikbakhsh, Ebrahim Abiri, Hossein Ghasemian, Mohammad Reza Salehi
A Two Stage Variable-Gain Low-Noise Amplifier for X-Band in 0.18 µm CMOS. Wirel. Pers. Commun. 98 (1) (2018)
Mohammad Reza Nikbakhsh, Ebrahim Abiri, Hossein Ghasemian, Mohammad Reza Salehi
Two-stage current-reused variable-gain low-noise amplifier for X-band receivers in 65 nm complementary metal oxide semiconductor technology. IET Circuits Devices Syst. 12 (5) (2018)