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Two-stage current-reused variable-gain low-noise amplifier for X-band receivers in 65 nm complementary metal oxide semiconductor technology.

Mohammad Reza NikbakhshEbrahim AbiriHossein GhasemianMohammad Reza Salehi
Published in: IET Circuits Devices Syst. (2018)
Keyphrases
  • metal oxide semiconductor
  • low cost
  • integrated circuit
  • image sensor
  • real time
  • dynamic range
  • wide dynamic range
  • d objects
  • motion estimation
  • embedded dram