Guangxi Hu

Publication Activity (10 Years)

Years Active: 2011-2023
Publications (10 Years): 5

Top Topics

Spiking Neural Networks

Analytical Models

Genetic Algorithm Is Employed

Field Effect Transistors

Top Venues

Sci. China Inf. Sci.

Microelectron. J.

Publications

Guodong Qi, Xinyu Chen, Guangxi Hu, Peng Zhou, Wenzhong Bao, Ye Lu
Knowledge-based neural network SPICE modeling for MOSFETs and its application on 2D material field-effect transistors. Sci. China Inf. Sci. 66 (2) (2023)
Wang Shule, Yulong Yan, Haoming Chu, Guangxi Hu, Zhi Zhang, Zhuo Zou, Lirong Zheng
Hand Gesture Recognition Using IR-UWB Radar with Spiking Neural Networks. AICAS (2022)
Jiarui Bao, Shuyan Hu, Guangxi Hu, Laigui Hu, Ran Liu, Lirong Zheng
A GaSb/In0.4Ga0.6As Heterojunction Z-Shaped Tunnel Field-Effect Transistor with High Performance. ASICON (2019)
Haisheng Qian, Guangxi Hu, Laigui Hu, Xing Zhou, Ran Liu, Li-Rong Zheng
Analytical models for channel potential and drain current in AlGaN/GaN HEMT devices. ASICON (2017)
Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng
Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs. Microelectron. J. 50 (2016)
Guangxi Hu, Shuyan Hu, Jianhua Feng, Ran Liu, Lingli Wang, Li-Rong Zheng
Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs. ASICON (2015)
Ping Xiang, Zhihao Ding, Guangxi Hu, Hui Chol Ri, Ran Liu, Lingli Wang, Xing Zhou
Analytic models for electric potential and subthreshold swing of the dual-material double-gate MOSFET. ASICON (2013)
Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Lingli Wang, Tingao Tang
Quantum mechanical effects on the threshold voltage of surrounding-gate MOSFETs. Microelectron. J. 43 (11) (2012)
Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang
Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs. Microelectron. J. 42 (10) (2011)
Peicheng Li, Guanghui Mei, Guangxi Hu, Ran Liu, Tingao Tang
Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study. ASICON (2011)
Zhihao Ding, Guangxi Hu, Jinglun Gu, Ran Liu, Lingli Wang, Tingao Tang
An analytic model for channel potential and subthreshold swing of the symmetric and asymmetric double-gate MOSFETs. Microelectron. J. 42 (3) (2011)
Guanghui Mei, Peicheng Li, Guangxi Hu, Ran Liu, Tingao Tang
Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs. ASICON (2011)