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Effects of unintended dopants on I-V characteristics of the double-gate MOSFETs, a simulation study.

Peicheng LiGuanghui MeiGuangxi HuRan LiuTingao Tang
Published in: ASICON (2011)
Keyphrases
  • simulation study
  • monte carlo
  • databases
  • genetic algorithm
  • objective function
  • multiscale
  • user interface
  • field effect transistors