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Analytical models for threshold voltage, drain induced barrier lowering effect of junctionless triple-gate FinFETs.

Guangxi HuShuyan HuJianhua FengRan LiuLingli WangLi-Rong Zheng
Published in: ASICON (2015)
Keyphrases
  • analytical models
  • analytical model
  • power system
  • case study
  • field effect transistors
  • early warning
  • power supply
  • real world
  • multiscale
  • high voltage
  • electrical properties
  • nano scale
  • short circuit
  • leakage current