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Analytical models for channel potential, threshold voltage, and subthreshold swing of junctionless triple-gate FinFETs.
Guangxi Hu
Shuyan Hu
Jianhua Feng
Ran Liu
Lingli Wang
Li-Rong Zheng
Published in:
Microelectron. J. (2016)
Keyphrases
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field effect transistors
analytical models
steady state
high density
mathematical analysis
analytical model
low voltage
high speed
threshold selection
real time
multi channel
operating conditions
multiple input
high voltage