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Electric potential and threshold voltage models for double-gate Schottky-barrier source/drain MOSFETs.

Peicheng LiGuangxi HuRan LiuTingao Tang
Published in: Microelectron. J. (2011)
Keyphrases
  • schottky barrier
  • experimental data
  • field effect transistors
  • prior knowledge
  • complex systems
  • power supply
  • data sets
  • wireless sensor networks
  • probabilistic model
  • high speed
  • statistical model
  • steady state