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Quantum mechanical effects on the threshold voltage of the evenly doped surrounding-gate MOSFETs.
Guanghui Mei
Peicheng Li
Guangxi Hu
Ran Liu
Tingao Tang
Published in:
ASICON (2011)
Keyphrases
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field effect transistors
low voltage
room temperature
quantum mechanics
power system
cmos technology
steady state
transmission line
threshold selection
high voltage
data sets
electrical power
artificial intelligence
high density
quantum computation
silicon dioxide