Cynthia Hsu

Publication Activity (10 Years)

Years Active: 2008-2023
Publications (10 Years): 4

Top Topics

Garbage Collection

Buffer Management

Top Venues

IEEE J. Solid State Circuits

Publications

Jonghak Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V, V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface. IEEE J. Solid State Circuits 58 (1) (2023)
Jong Yuh, Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K. V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. ISSCC (2022)
Toshiyuki Kouchi, Mami Kakoi, Noriyasu Kumazaki, Akio Sugahara, Akihiro Imamoto, Yasufumi Kajiyama, Yuri Terada, Sanad Bushnaq, Naoaki Kanagawa, Takuyo Kodama, Ryo Fukuda, Hiromitsu Komai, Norichika Asaoka, Hidekazu Ohnishi, Ryosuke Isomura, Takaya Handa, Kensuke Yamamoto, Yuki Ishizaki, Yoko Deguchi, Atsushi Okuyama, Junichi Sato, Hiroki Yabe, Cynthia Hsu, Masahiro Yoshihara
A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs. IEEE J. Solid State Circuits 56 (1) (2021)
Toshiyuki Kouchi, Noriyasu Kumazaki, Masashi Yamaoka, Sanad Bushnaq, Takuyo Kodama, Yuki Ishizaki, Yoko Deguchi, Akio Sugahara, Akihiro Imamoto, Norichika Asaoka, Ryosuke Isomura, Takaya Handa, Junichi Sato, Hiromitsu Komai, Atsushi Okuyama, Naoaki Kanagawa, Yasufumi Kajiyama, Yuri Terada, Hidekazu Ohnishi, Hiroki Yabe, Cynthia Hsu, Mami Kakoi, Masahiro Yoshihara
13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs. ISSCC (2020)
Yan Li, Seungpil Lee, Ken Oowada, Hao Nguyen, Qui Nguyen, Nima Mokhlesi, Cynthia Hsu, Jason Li, Venky Ramachandra, Teruhiko Kamei, Masaaki Higashitani, Tuan Pham, Mitsuaki Honma, Yoshihisa Watanabe, Kazumi Ino, Binh Le, Byungki Woo, Khin Htoo, Taiyuan Tseng, Long Pham, Frank Tsai, Kwang-Ho Kim, Yi-Chieh Chen, Min She, Jonghak Yuh, Alex Chu, Chen Chen, Ruchi Puri, Hung-Szu Lin, Yi-Fang Chen, William Mak, Jonathan Huynh, Jim Chan, Mitsuyuki Watanabe, Daniel Yang, Grishma Shah, Pavithra Souriraj, Dinesh Tadepalli, Tenugu Suman, Ray Gao, Viski Popuri, Behdad Azarbayjani, Ravindra Madpur, James Lan, Emilio Yero, Feng Pan, Patrick Hong, Jang Yong Kang, Farookh Moogat, Yupin Fong, Raul Cernea, Sharon Huynh, Cuong Trinh, Mehrdad Mofidi, Ritu Shrivastava, Khandker Quader
128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode. ISSCC (2012)
Cuong Trinh, Noboru Shibata, Takeshi Nakano, Mikio Ogawa, Jumpei Sato, Yoshikazu Takeyama, Katsuaki Isobe, Binh Le, Farookh Moogat, Nima Mokhlesi, Kenji Kozakai, Patrick Hong, Teruhiko Kamei, Kiyoaki Iwasa, J. Nakai, Takahiro Shimizu, Mitsuaki Honma, Shintaro Sakai, Toshimasa Kawaai, Satoru Hoshi, Jonghak Yuh, Cynthia Hsu, Taiyuan Tseng, Jason Li, Jayson Hu, M. Liu, Shahzad Khalid, J. Chen, Mitsuyuki Watanabe, Hung-Szu Lin, Junhui Yang, K. McKay, Khanh Nguyen, Tuan Pham, Y. Matsuda, K. Nakamura, Kazunori Kanebako, Susumu Yoshikawa, W. Igarashi, Atsushi Inoue, T. Takahashi, Yukio Komatsu, C. Suzuki, Kousuke Kanazawa, Masaaki Higashitani, Seungpil Lee, T. Murai, K. Nguyen, James Lan, Sharon Huynh, Mark Murin, Mark Shlick, Menahem Lasser, Raul Cernea, Mehrdad Mofidi, K. Schuegraf, Khandker Quader
A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS. ISSCC (2009)
Raul Cernea, Long Pham, Farookh Moogat, Siu Lung Chan, Binh Le, Yan Li, Shouchang Tsao, Taiyuan Tseng, Khanh Nguyen, Jason Li, Jayson Hu, Jonghak Yuh, Cynthia Hsu, Fanglin Zhang, Teruhiko Kamei, Hiroaki Nasu, Phil Kliza, Khin Htoo, Jeffrey Lutze, Yingda Dong, Masaaki Higashitani, Junhui Yang, Hung-Szu Lin, Vamshi Sakhamuri, Alan Li, Feng Pan, Sridhar Yadala, Subodh Taigor, Kishan Pradhan, James Lan, Jim Chan, Takumi Abe, Yasuyuki Fukuda, Hideo Mukai, Koichi Kawakami, Connie Liang, Tommy Ip, Shu-Fen Chang, Jaggi Lakshmipathi, Sharon Huynh, Dimitris Pantelakis, Mehrdad Mofidi, Khandker Quader
A 34 MB/s MLC Write Throughput 16 Gb NAND With All Bit Line Architecture on 56 nm Technology. IEEE J. Solid State Circuits 44 (1) (2009)
Raul Cernea, Long Pham, Farookh Moogat, Siu Lung Chan, Binh Le, Yan Li, Shouchang Tsao, Taiyuan Tseng, Khanh Nguyen, Jason Li, Jayson Hu, Jong Park, Cynthia Hsu, Fanglin Zhang, Teruhiko Kamei, Hiroaki Nasu, Phil Kliza, Khin Htoo, Jeffery Lutze, Yingda Dong, Masaaki Higashitani, Junhui Yang, Hung-Szu Lin, Vamshi Sakhamuri, Alan Li, Feng Pan, Sridhar Yadala, Subodh Taigor, Kishan Pradhan, James Lan, Jim Chan, Takumi Abe, Yasuyuki Fukuda, Hideo Mukai, Koichi Kawakami, Connie Liang, Tommy Ip, Shu-Fen Chang, Jaggi Lakshmipathi, Sharon Huynh, Dimitris Pantelakis, Mehrdad Mofidi, Khandker Quader
A 34MB/s-Program-Throughput 16Gb MLC NAND with All-Bitline Architecture in 56nm. ISSCC (2008)