A 5.6MB/s 64Gb 4b/Cell NAND Flash memory in 43nm CMOS.
Cuong TrinhNoboru ShibataTakeshi NakanoMikio OgawaJumpei SatoYoshikazu TakeyamaKatsuaki IsobeBinh LeFarookh MoogatNima MokhlesiKenji KozakaiPatrick HongTeruhiko KameiKiyoaki IwasaJ. NakaiTakahiro ShimizuMitsuaki HonmaShintaro SakaiToshimasa KawaaiSatoru HoshiJonghak YuhCynthia HsuTaiyuan TsengJason LiJayson HuM. LiuShahzad KhalidJ. ChenMitsuyuki WatanabeHung-Szu LinJunhui YangK. McKayKhanh NguyenTuan PhamY. MatsudaK. NakamuraKazunori KanebakoSusumu YoshikawaW. IgarashiAtsushi InoueT. TakahashiYukio KomatsuC. SuzukiKousuke KanazawaMasaaki HigashitaniSeungpil LeeT. MuraiK. NguyenJames LanSharon HuynhMark MurinMark ShlickMenahem LasserRaul CerneaMehrdad MofidiK. SchuegrafKhandker QuaderPublished in: ISSCC (2009)
Keyphrases
- flash memory
- hard disk
- solid state
- high speed
- cmos technology
- garbage collection
- main memory
- file system
- silicon on insulator
- buffer management
- random access
- embedded systems
- disk drives
- nm technology
- data storage
- metal oxide semiconductor
- low cost
- database systems
- power consumption
- b tree
- small size
- low power
- hand held devices
- storage systems
- storage devices
- memory management
- database management systems
- software systems
- video sequences
- real time