128Gb 3b/cell NAND flash memory in 19nm technology with 18MB/s write rate and 400Mb/s toggle mode.
Yan LiSeungpil LeeKen OowadaHao NguyenQui NguyenNima MokhlesiCynthia HsuJason LiVenky RamachandraTeruhiko KameiMasaaki HigashitaniTuan PhamMitsuaki HonmaYoshihisa WatanabeKazumi InoBinh LeByungki WooKhin HtooTaiyuan TsengLong PhamFrank TsaiKwang-Ho KimYi-Chieh ChenMin SheJonghak YuhAlex ChuChen ChenRuchi PuriHung-Szu LinYi-Fang ChenWilliam MakJonathan HuynhJim ChanMitsuyuki WatanabeDaniel YangGrishma ShahPavithra SourirajDinesh TadepalliTenugu SumanRay GaoViski PopuriBehdad AzarbayjaniRavindra MadpurJames LanEmilio YeroFeng PanPatrick HongJang Yong KangFarookh MoogatYupin FongRaul CerneaSharon HuynhCuong TrinhMehrdad MofidiRitu ShrivastavaKhandker QuaderPublished in: ISSCC (2012)
Keyphrases
- flash memory
- hard disk
- solid state
- disk drives
- file system
- garbage collection
- buffer management
- main memory
- random access
- read write
- embedded systems
- data storage
- database systems
- b tree
- storage management
- storage systems
- data structure
- hand held devices
- small size
- high speed
- storage devices
- databases
- nm technology
- neural network
- power consumption
- video sequences
- image processing