Takuyo Kodama

Publication Activity (10 Years)

Years Active: 2017-2023
Publications (10 Years): 6

Top Topics

Garbage Collection

Buffer Management

Top Venues

IEEE J. Solid State Circuits

Publications

Jonghak Yuh, Yen-Lung Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Gwang Yeong Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, Taekeun Han, Masatoshi Okumura, Jiwen Liu, Jeongduk John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Akihiro Matsuda, Chen Chen, Indra K. V, V. S. N. K. Chaitanya G., Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface. IEEE J. Solid State Circuits 58 (1) (2023)
Jong Yuh, Jason Li, Heguang Li, Yoshihiro Oyama, Cynthia Hsu, Pradeep Anantula, Stanley Jeong, Anirudh Amarnath, Siddhesh Darne, Sneha Bhatia, Tianyu Tang, Aditya Arya, Naman Rastogi, Naoki Ookuma, Hiroyuki Mizukoshi, Alex Yap, Demin Wang, Steve Kim, Yonggang Wu, Min Peng, Jason Lu, Tommy Ip, Seema Malhotra, David Han, Masatoshi Okumura, Jiwen Liu, John Sohn, Hardwell Chibvongodze, Muralikrishna Balaga, Aki Matsuda, Chakshu Puri, Chen Chen, Indra K. V, Chaitanya G, Venky Ramachandra, Yosuke Kato, Ravi Kumar, Huijuan Wang, Farookh Moogat, In-Soo Yoon, Kazushige Kanda, Takahiro Shimizu, Noboru Shibata, Takashi Shigeoka, Kosuke Yanagidaira, Takuyo Kodama, Ryo Fukuda, Yasuhiro Hirashima, Mitsuhiro Abe
A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface. ISSCC (2022)
Tsutomu Higuchi, Takuyo Kodama, Koji Kato, Ryo Fukuda, Naoya Tokiwa, Mitsuhiro Abe, Teruo Takagiwa, Yuki Shimizu, Junji Musha, Katsuaki Sakurai, Jumpei Sato, Tetsuaki Utsumi, Kazuhide Yoneya, Yasuhiro Suematsu, Toshifumi Hashimoto, Takeshi Hioka, Kosuke Yanagidaira, Masatsugu Kojima, Junya Matsuno, Kei Shiraishi, Kensuke Yamamoto, Shintaro Hayashi, Tomoharu Hashiguchi, Kazuko Inuzuka, Akio Sugahara, Mitsuaki Honma, Keiji Tsunoda, Kazumasa Yamamoto, Takahiro Sugimoto, Tomofumi Fujimura, Mizuki Kaneko, Hiroki Date, Osamu Kobayashi, Takatoshi Minamoto, Ryoichi Tachibana, Itaru Yamaguchi, Juan Lee, Venky Ramachandra, Srinivas Rajendra, Tianyu Tang, Siddhesh Darne, Jiwang Lee, Jason Li, Toru Miwa, Ryuji Yamashita, Hiroshi Sugawara, Naoki Ookuma, Masahiro Kano, Hiroyuki Mizukoshi, Yuki Kuniyoshi, Mitsuyuki Watanabe, Kei Akiyama, Hirotoshi Mori, Akira Arimizu, Yoshito Katano, Masakazu Ehama, Hiroshi Maejima, Koji Hosono, Masahiro Yoshihara
30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology. ISSCC (2021)
Toshiyuki Kouchi, Mami Kakoi, Noriyasu Kumazaki, Akio Sugahara, Akihiro Imamoto, Yasufumi Kajiyama, Yuri Terada, Sanad Bushnaq, Naoaki Kanagawa, Takuyo Kodama, Ryo Fukuda, Hiromitsu Komai, Norichika Asaoka, Hidekazu Ohnishi, Ryosuke Isomura, Takaya Handa, Kensuke Yamamoto, Yuki Ishizaki, Yoko Deguchi, Atsushi Okuyama, Junichi Sato, Hiroki Yabe, Cynthia Hsu, Masahiro Yoshihara
A 128Gb 1-bit/Cell 96-Word-Line-Layer 3D Flash Memory to Improve the Random Read Latency With tProg = 75 μs and tR = 4 μs. IEEE J. Solid State Circuits 56 (1) (2021)
Toshiyuki Kouchi, Noriyasu Kumazaki, Masashi Yamaoka, Sanad Bushnaq, Takuyo Kodama, Yuki Ishizaki, Yoko Deguchi, Akio Sugahara, Akihiro Imamoto, Norichika Asaoka, Ryosuke Isomura, Takaya Handa, Junichi Sato, Hiromitsu Komai, Atsushi Okuyama, Naoaki Kanagawa, Yasufumi Kajiyama, Yuri Terada, Hidekazu Ohnishi, Hiroki Yabe, Cynthia Hsu, Mami Kakoi, Masahiro Yoshihara
13.5 A 128Gb 1b/Cell 96-Word-Line-Layer 3D Flash Memory to Improve Random Read Latency with tPROG=75µs and tR=4µs. ISSCC (2020)
Ryuji Yamashita, Sagar Magia, Tsutomu Higuchi, Kazuhide Yoneya, Toshio Yamamura, Hiroyuki Mizukoshi, Shingo Zaitsu, Minoru Yamashita, Shunichi Toyama, Norihiro Kamae, Juan Lee, Shuo Chen, Jiawei Tao, William Mak, Xiaohua Zhang, Ying Yu, Yuko Utsunomiya, Yosuke Kato, Manabu Sakai, Masahide Matsumoto, Hardwell Chibvongodze, Naoki Ookuma, Hiroki Yabe, Subodh Taigor, Rangarao Samineni, Takuyo Kodama, Yoshihiko Kamata, Yuzuru Namai, Jonathan Huynh, Sung-En Wang, Yankang He, Trung Pham, Vivek Saraf, Akshay Petkar, Mitsuyuki Watanabe, Koichiro Hayashi, Prashant Swarnkar, Hitoshi Miwa, Aditya Pradhan, Sulagna Dey, Debasish Dwibedy, Thushara Xavier, Muralikrishna Balaga, Samiksha Agarwal, Swaroop Kulkarni, Zameer Papasaheb, Sahil Deora, Patrick Hong, Meiling Wei, Gopinath Balakrishnan, Takuya Ariki, Kapil Verma, Chang Hua Siau, Yingda Dong, Ching-Huang Lu, Toru Miwa, Farookh Moogat
11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology. ISSCC (2017)