11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology.
Ryuji YamashitaSagar MagiaTsutomu HiguchiKazuhide YoneyaToshio YamamuraHiroyuki MizukoshiShingo ZaitsuMinoru YamashitaShunichi ToyamaNorihiro KamaeJuan LeeShuo ChenJiawei TaoWilliam MakXiaohua ZhangYing YuYuko UtsunomiyaYosuke KatoManabu SakaiMasahide MatsumotoHardwell ChibvongodzeNaoki OokumaHiroki YabeSubodh TaigorRangarao SamineniTakuyo KodamaYoshihiko KamataYuzuru NamaiJonathan HuynhSung-En WangYankang HeTrung PhamVivek SarafAkshay PetkarMitsuyuki WatanabeKoichiro HayashiPrashant SwarnkarHitoshi MiwaAditya PradhanSulagna DeyDebasish DwibedyThushara XavierMuralikrishna BalagaSamiksha AgarwalSwaroop KulkarniZameer PapasahebSahil DeoraPatrick HongMeiling WeiGopinath BalakrishnanTakuya ArikiKapil VermaChang Hua SiauYingda DongChing-Huang LuToru MiwaFarookh MoogatPublished in: ISSCC (2017)